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| FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: * * * OmnigoldTM Metalization System D C A 2x ON FULL R B E .725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG JC 20 A 65 V 36 V 65 V 4.0 V 270 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 0.7 C/W O O O O DIM A B C D E F G H I J K L M N G H MINIMUM inches / mm J I .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .120 / 3.05 .135 / 3.43 ORDER CODE: ASI10589 O CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE COB PG C TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 28 V VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 175 W IC = 5.0 A f = 1.0 MHz f = 108 MHz MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 15 20 200 200 10 65 UNITS V V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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